SUD19N20-90
N-Channel
200 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V
DS
(V)
200
R
DS(on)
()
0.090 at V
GS
= 10 V
0.105 at V
GS
= 6 V
I
D
(A)
19
17.5
FEATURES
•
•
•
•
•
TrenchFET
®
Power MOSFET
175 °C Junction Temperature
PWM Optimized
100 % R
g
Tested
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Primary Side Switch
TO-252
D
Drain Connected to Tab
G
D
S
G
Top View
Ordering Information:
SUD19N20-90-E3 (Lead (Pb)-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 175 °C)
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
T
C
= 125 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
stg
Limit
200
± 20
19
11
40
19
19
18
136
b
3
a
- 55 to 175
mJ
W
°C
A
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
a
Junction-to-Case (Drain)
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t
10 s
Steady State
Symbol
R
thJA
R
thJC
Typical
15
40
0.85
Maximum
18
50
1.1
°C/W
Unit
1/7
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