SUD19N20-90
N-Channel
200 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
40
V
GS
= 10 V thru 7 V
40
6V
30
I
D
- Drain Current (A)
I
D
- Drain Current (A)
30
20
20
T
C
= 125 °C
10
25 °C
10
5V
4V
0
0
2
4
6
8
10
- 55 °C
0
0
1
2
3
4
5
6
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
70
60
g fs - Transconductance (S)
50
25 °C
40
125 °C
30
20
10
0
0
10
20
I
D
- Drain Current (A)
30
40
0.00
0
T
C
= - 55 °C
R
DS(on)
- On-Resistance ()
0.15
0.20
Transfer Characteristics
0.10
V
GS
= 6 V
V
GS
= 10 V
0.05
10
20
I
D
- Drain Current (A)
30
40
Transconductance
2500
20
On-Resistance vs. Drain Current
2000
C - Capacitance (pF)
C
iss
1500
V
GS
- Gate-to-Source Voltage (V)
16
V
DS
= 100 V
I
D
= 19 A
12
1000
8
500
C
rss
0
0
40
80
120
160
200
C
oss
4
0
0
10
20
30
40
50
60
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
Capacitance
Gate Charge
3/7
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