SQ3426EEV
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
10 s (max)
255
−
260_C
1X4_C/s (max)
217_C
140
−
170_C
60 s (max)
3_C/s (max)
60-120 s (min)
Pre-Heating Zone
Reflow Zone
3-6_C/s (max)
Maximum peak temperature at 240_C is allowed.
FIGURE 3.
Solder Reflow Temperature and Time Durations
THERMAL PERFORMANCE
A basic measure of a device’s thermal performance is the
junction-to-case thermal resistance, Rq
jc
, or the
junction-to-foot thermal resistance, Rq
jf
. This parameter is
measured for the device mounted to an infinite heat sink and
is therefore a characterization of the device only, in other
words, independent of the properties of the object to which the
device is mounted. Table 1 shows the thermal performance
of the TSOP-6.
On-Resistance vs. Junction Temperature
1.6
V
GS
= 4.5 V
I
D
= 6.1 A
1.4
r
DS(on)
−
On-Resiistance
(Normalized)
1.2
TABLE 1.
Equivalent Steady State Performance—TSOP-6
Thermal Resistance Rq
jf
30_C/W
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
SYSTEM AND ELECTRICAL IMPACT OF
TSOP-6
In any design, one must take into account the change in
MOSFET r
DS(on)
with temperature (Figure 4).
T
J
−
Junction Temperature (_C)
FIGURE 4.
Si3434DV
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