SQ3426EEV
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
10
-2
100
10
I
GSS
- Gate Current (A)
I
S
- Source Current (A)
10
-4
T
J
= 150 °C
1
T
J
= 25 °C
0.1
10
-6
T
J
= 150 °C
T
J
= 25 °C
10
-8
0.01
10
-10
0
6
12
18
24
30
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
GS
- Gate-to-Source
Voltage
(V)
V
SD
- Source-to-Drain
Voltage
(V)
Gate Current vs. Gate-Source Voltage
2.1
R
DS(on)
- On-Resistance (Normalized)
Source-Drain Diode Forward Voltage
0.6
I
D
= 3.2 A
1.8
V
GS(th)
Variance
(V)
0.3
V
GS
= 10
V
0.0
1.5
- 0.3
I
D
= 5 mA
- 0.6
I
D
= 250 µA
1.2
0.9
- 0.9
0.6
- 50
- 25
0
25
50
75
100
125
150
175
- 1.2
- 50
- 25
0
T
J
- Junction Temperature (°C)
25
50
75 100
T
J
- Temperature (°C)
125
150
175
On-Resistance vs. Junction Temperature
0.20
80
I
D
= 1 mA
Threshold Voltage
V
DS
- Drain-to-Source
Voltage
(V)
R
DS(on)
- On-Resistance (Ω)
0.16
76
0.12
T
J
= 150 °C
0.08
72
68
0.04
T
J
= 25 °C
0.00
0
1
2
3
4
5
6
7
8
9
10
V
GS
- Gate-to-Source
Voltage
(V)
64
60
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Junction Temperature (°C)
On-Resistance vs. Gate-Source Voltage
Drain-Source Breakdown vs. Junction Temperature
4 / 11
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