SQ3426EEV
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
15
V
GS
= 10
V
thru 5
V
12
I
D
- Drain Current (A)
V
GS
= 4
V
9
I
D
- Drain Current (A)
15
12
9
6
6
T
C
= 25 °C
3
T
C
= 125 °C
3
V
GS
= 3 V
0
0
1
2
3
4
V
DS
- Drain-to-Source
Voltage
(V)
5
0
0
1
2
3
T
C
= - 55 °C
4
5
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
25
0.15
Transfer Characteristics
T
C
= - 55 °C
15
T
C
= 25 °C
10
T
C
= 125 °C
5
R
DS(on)
- On-Resistance (Ω)
g
fs
- Transconductance (S)
20
0.12
0.09
V
GS
= 4.5
V
V
GS
= 10
V
0.03
0.06
0
0
2
4
6
I
D
- Drain Current (A)
8
10
0.00
0
3
6
9
I
D
- Drain Current (A)
12
15
Transconductance
1000
10
On-Resistance vs. Drain Current
V
DS
= 30 V
I
D
= 4 A
800
C - Capacitance (pF)
V
GS
-
Gate-to-Source
Voltage (V)
8
600
C
iss
6
400
4
200
C
oss
C
rss
2
0
0
10
20
30
40
50
60
0
0
4
8
12
16
20
V
DS
- Drain-to-Source Voltage (V)
Q
g
- Total
Gate
Charge (nC)
Capacitance
Gate Charge
3 / 11
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