SiHD5N50D
D Series Power MOSFET
TO-252AA (HIGH VOLTAGE)
E
b3
E1
L3
D1
D
L4
H
b2
A
c2
b
e
A1
L
c
θ
L2
L1
MILLIMETERS
DIM.
E
L
L1
L2
L3
L4
D
H
b
b2
b3
e
A
A1
c
c2
D1
E1
θ
ECN: S-81965-Rev. A, 15-Sep-08
DWG: 5973
2.20
0.00
0.45
0.45
5.30
4.40
0'
0.89
0.64
6.00
9.40
0.64
0.77
5.21
2.286 BSC
2.38
0.13
0.60
0.58
-
-
10'
0.087
0.000
0.018
0.018
0.209
0.173
0'
MIN.
6.40
1.40
2.743 REF
0.508 BSC
1.27
1.01
6.22
10.40
0.88
1.14
5.46
0.035
0.025
0.236
0.370
0.025
0.030
0.205
MAX.
6.73
1.77
MIN.
0.252
0.055
INCHES
MAX.
0.265
0.070
0.108 REF
0.020 BSC
0.050
0.040
0.245
0.409
0.035
0.045
0.215
0.090 BSC
0.094
0.005
0.024
0.023
-
-
10'
Notes
1. Package body sizes exclude mold flash, protrusion or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 0.10 mm per side.
2. Package body sizes determined at the outermost extremes of the plastic body exclusive of mold flash, gate burrs and interlead flash, but
including any mismatch between the top and bottom of the plastic body.
3. The package top may be smaller than the package bottom.
4. Dimension "b" does not include dambar protrusion. Allowable dambar protrusion shall be 0.10 mm total in excess of "b" dimension at maximum
material condition. The dambar cannot be located on the lower radius of the foot.
7/9
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