SiHD5N50D
D Series Power MOSFET
FEATURES
• Optimal Design
- Low Area Specific On-Resistance
- Low Input Capacitance (C
iss
)
- Reduced Capacitive Switching Losses
- High Body Diode Ruggedness
- Avalanche Energy Rated (UIS)
• Optimal Efficiency and Operation
- Low Cost
- Simple Gate Drive Circuitry
- Low Figure-of-Merit (FOM): R
on
x Q
g
- Fast Switching
• Material categorization: For definitions of compliance
please see
www.freescale.net.cn
PRODUCT SUMMARY
V
DS
(V) at T
J
max.
R
DS(on)
max. at 25 °C ()
Q
g
(max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
20
3
5
Single
550
1.5
D
APPLICATIONS
• Consumer Electronics
- Displays (LCD or Plasma TV)
• Server and Telecom Power Supplies
- SMPS
• Industrial
- Welding
- Induction Heating
- Motor Drives
• Battery Chargers
DPAK
(TO-252)
G
D
G
S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
DPAK (TO-252)
SiHD5N50D-E3
SiHD5N50D-GE3
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt
(d)
Soldering Recommendations (Peak Temperature)
c
for 10 s
T
J
= 125 °C
E
AS
P
D
T
J
, T
stg
dV/dt
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 30
30
5.3
3.4
10
0.83
23
104
- 55 to + 150
24
0.28
300
W/°C
mJ
W
°C
V/ns
°C
A
V
UNIT
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 2.3 mH, R
g
= 25
,
I
AS
= 4.5 A.
c. 1.6 mm from case.
d. I
SD
I
D
, starting T
J
= 25 °C.
1/9
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
