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MC6601 参数 Datasheet PDF下载

MC6601图片预览
型号: MC6601
PDF下载: 下载PDF文件 查看货源
内容描述: 氮磷通道32 -V ( DS ) MOSFET高性能沟道技术 [N & P-Channel 32-V (D-S) MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 7 页 / 517 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AO6601 / MC6601
Typical Electrical Characteristics (P-Channel)
5
V
GS
=-10V
4
I
D
- Drain Current (A)
I
D
- Drain Current (A)
-4.5V
4
125
o
C
3
5
T
A
= -55
o
C
25
o
C
3
2
-3.0V
1
2
1
0
0
0.5
1
1.5
2
2.5
V
DS
- Drain-to-Source Voltage (V)
0
1.5
2
2.5
3
3.5
4
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
800
2.5
r
DS(ON)
, Normalized ON-Resistance
Transfer Characteristics
C - Capacitance (pF)
600
C
ISS
400
C
OSS
2.0
-4.5V
1.5
200
C
RSS
0
0
6
1.0
-10V
0.5
0
1
2
3
4
5
I
D
- Drain Current (A)
12
18
24
30
VDS - Drai n-to-Source Vol tage (V)
On-Resistance vs. Drain Current
-10
Capacitance
1.6
r
DS(ON)
- On-Resistance (Normalized)
V
GS
= -10V
1.4
V
GS
- Gate-to-Source Voltage ( V
-8
-6
1.2
-4
1
-2
0.8
0
0
2
4
6
8
10
12
0.6
-50
-25
0
25
50
75
o
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature ( C)
Gate Charge
On-Resistance vs. Junction Temperature
5
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