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MC6601 参数 Datasheet PDF下载

MC6601图片预览
型号: MC6601
PDF下载: 下载PDF文件 查看货源
内容描述: 氮磷通道32 -V ( DS ) MOSFET高性能沟道技术 [N & P-Channel 32-V (D-S) MOSFET High performance trench technology]
分类和应用:
文件页数/大小: 7 页 / 517 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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Freescale
AO6601 / MC6601
Typical Electrical Characteristics (N-Channel)
30
V
GS
= 10V
24
I
D
- Drain Current (A)
4.5V
4.0V
18
I
D
-Drain Current (A)
12
125
o
C
9
15
T
A
= -55
o
C
25
o
C
12
6
6
3.0V
3
0
0
1
2
3
4
5
0
1
2
3
V
GS
- Gate-to-Source Voltage (V)
4
5
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
400
Transfer Characteristics
4
r
DS(ON)
- Normalized On-Resistance
C - Capacitance (pF)
300
C
ISS
200
C
OSS
100
C
RSS
3
2
4.5V
1
10V
0
0
6
12
18
24
30
0
0
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
r
DS(ON)
- On-Resistance (Normalized)
10
V
GS
- Gate-to-Source Voltage ( V )
1.6
V
GS
= 10V
1.4
8
6
1.2
4
1
0.8
2
0.6
0
0
1
2
3
4
5
-50
-25
0
25
50
75
o
100
125
150
T
J
- Junction Temperature ( C)
Q
g
- Total Gate Charge (nC)
Gate Charge
On-Resistance vs. Junction Temperature
3
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