IRFR/U4615PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
100µsec
1msec
ISD, Reverse Drain Current (A)
100
ID, Drain-to-Source Current (A)
T J = 175°C
10
T J = 25°C
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
VGS = 0V
1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8.
Maximum Safe Operating Area
190
185
180
175
170
165
160
155
150
145
140
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
Id = 5mA
ID, Drain Current (A)
Fig 9.
Maximum Drain Current vs.
Case Temperature
3.0
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
500
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
ID
TOP
2.8A
5.3A
BOTTOM 21A
2.5
2.0
Energy (µJ)
1.5
1.0
0.5
0.0
-20
0
20
40
60
80 100 120 140 160
VDS, Drain-to-Source Voltage (V)
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
4 / 11
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