IRFR/U4615PbF
1000
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
1000
TOP
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
10
5.0V
1
1
5.0V
≤
60µs PULSE WIDTH
Tj = 25°C
0.01
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
0.1
≤
60µs PULSE WIDTH
Tj = 175°C
10
0.1
0.1
1
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 2.
Typical Output Characteristics
3.0
ID = 21A
VGS = 10V
ID, Drain-to-Source Current (A)
100
2.5
TJ = 175°C
TJ = 25°C
2.0
10
1.5
1
VDS = 50V
≤60µs
PULSE WIDTH
0.1
2
4
6
8
10
12
14
16
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Fig 4.
Normalized On-Resistance vs. Temperature
14.0
VGS, Gate-to-Source Voltage (V)
12.0
10.0
8.0
6.0
4.0
2.0
0.0
ID= 21A
VDS= 120V
VDS= 75V
VDS= 30V
10000
C, Capacitance (pF)
Ciss
1000
Coss
Crss
100
10
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0
5
10
15
20
25
30
35
QG, Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
3 / 11
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