IRFR/U4615PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
R
G(int)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Min. Typ. Max. Units
150
–––
–––
3.0
–––
–––
–––
–––
–––
Conditions
–––
0.19
34
–––
–––
–––
–––
–––
2.7
–––
V V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 5mA
42
mΩ V
GS
= 10V, I
D
= 21A
5.0
V V
DS
= V
GS
, I
D
= 100µA
V
DS
= 150V, V
GS
= 0V
20
µA
250
V
DS
= 150V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
100
nA
V
GS
= -20V
-100
f
–––
Ω
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
26
8.6
9.0
17
15
35
25
20
1750
155
40
179
382
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
Conditions
g
hÃ
V
DS
= 50V, I
D
= 21A
I
D
= 21A
V
DS
= 75V
nC
V
GS
= 10V
I
D
= 21A, V
DS
=0V, V
GS
= 10V
V
DD
= 98V
I
D
= 21A
ns
R
G
= 7.3Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
(See Fig.5)
pF ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 120V (See Fig.11)
V
GS
= 0V, V
DS
= 0V to 120V
f
f
h
g
Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
–––
–––
33
A
140
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
––– –––
1.3
V
–––
70
–––
ns
–––
83
–––
––– 177 –––
nC
T
J
= 125°C
––– 247 –––
–––
4.9
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode.
T
J
= 25°C, I
S
= 21A, V
GS
= 0V
V
R
= 100V,
T
J
= 25°C
T
J
= 125°C
I
F
= 21A
di/dt = 100A/µs
T
J
= 25°C
f
f
2 / 11
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