AOT42S60/AOTF42S60
600V 39A
α
MOS
TM
Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
T
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance for AOTF42S60(Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
T
on
Single Pulse
0.01
T
0.01
0.1
1
10
100
0.001
0.00001
0.0001
0.001
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance for AOTF42S60(Note F)
17:
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=3.3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
0.001
0.00001
T
on
T
0.01
0.1
1
10
100
0.0001
0.001
Pulse Width (s)
Figure 18: Normalized Maximum Transient Thermal Impedance for AOTF42S60L (Note F)
6/7
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