AOT42S60/AOTF42S60
600V 39A
α
MOS
TM
Power Transistor
General Description
The AOT42S60 & AOTF42S60 have been fabricated using the advanced
αMOS
TM
high voltage process that is
designed to deliver high levels of performance and robustness in switching applications.
By providing low R
DS(on)
, Q
g
and E
OSS
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V
DS
@ T
j,max
I
DM
R
DS(ON),max
Q
g,typ
E
oss
@ 400V
700V
166A
0.099Ω
40nC
9.2µJ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
AOT42S60
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
G
C
AOTF42S60 AOTF42S60L
600
±30
39*
25*
166
11
234
1345
39*
25*
Units
V
V
A
A
mJ
mJ
V
GS
C
T
C
=25°
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
P
D
dv/dt
T
J
, T
STG
T
L
Symbol
R
θJA
AOT42S60
65
0.5
0.3
417
3.3
39
25
Repetitive avalanche energy
Single pulsed avalanche energy
T
C
=25°
C
Power Dissipation
B
Derate above 25
o
C
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
A
50
0.4
100
20
-55 to 150
300
37.9
0.3
W
W/
o
C
V/ns
°
C
°
C
Units
°
C/W
°
C/W
°
C/W
AOTF42S60 AOTF42S60L
65
--
2.5
65
--
3.3
R
θCS
Maximum Case-to-sink
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
