AOT42S60/AOTF42S60
600V 39A
α
MOS
TM
Power Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.0E+02
1.0E+01
1.0E+00
25°C
V
GS
(Volts)
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
9
125°C
12
V
DS
=480V
I
D
=21A
15
6
3
0
0
15
30
45
60
Q
g
(nC)
Figure 8: Gate-Charge Characteristics
V
SD
(Volts)
Figure 7: Body-Diode Characteristics (Note E)
10000
C
iss
Eoss(uJ)
1000
C
oss
100
20
16
E
oss
12
Capacitance (pF)
8
10
C
rss
4
1
0
200
300
400
500
V
DS
(Volts)
Figure 9: Capacitance Characteristics
100
600
0
0
100
200
300
400
V
DS
(Volts)
Figure 10: Coss stored Energy
500
600
1000
1000
100
I
D
(Amps)
R
DS(ON)
limited
10µs
100µs
I
D
(Amps)
100
R
DS(ON)
limited
10µs
100µs
1ms
10
10
1ms
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
10ms
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
10ms
0.1s
1s
10s
0.01
0.1
1
10
V
DS
(Volts)
100
1000
0.01
0.1
1
10
V
DS
(Volts)
100
1000
Figure 11: Maximum Forward Biased Safe
Operating Area for AOT42S60(Note F)
Figure 12: Maximum Forward Biased Safe
Operating Area for AOTF42S60(Note F)
4/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
