AOTF4185
40V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
= -20V
I
D
= -20A
8
Capacitance (pF)
-V
GS
(Volts)
4000
3500
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
35
40
45
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
10
20
30
40
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
rss
C
oss
C
iss
6
4
2
1000
100
10
1
R
DS(ON)
limited
0.1
0.01
0.1
1
T
J(Max)
=175°C
T
C
=25°C
1000
T
J(Max)
=175°C
Tc=25°C
DC
1ms
10ms
100ms
Power (W)
100µs
-I
D
(Amps)
100
I
F
=-6.5A, dI/dt=100A/µs
10
100
-V
DS
(Volts)
10
0.0001
1
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Case (Note F)
0.01
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
1
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=4.5°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Single Pulse
T
0.001
0.00001
0.0001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
0.001
100
1000
4/6
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