AOTF4185
40V P-Channel MOSFET
General Description
The AOTF4185 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch and battery protection applications.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
= 4.5V)
-40V
-34A
< 16mΩ
< 20mΩ
D
G
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Symbol
Parameter
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
C
C
Maximum
-40
±20
-34
-27
-100
-42
88
33
16
-55 to 175
Units
V
V
A
A
mJ
W
°C
V
GS
T
C
=25°C
T
C
=100°C
I
D
I
DM
I
AS
, I
AR
E
AS
, E
AR
P
D
T
J
, T
STG
Avalanche energy L=0.1mH
T
C
=25°C
Power Dissipation
B
T
C
=100°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
Steady-State
Steady-State
R
θJC
Typ
10
3
Max
13
4.5
Units
°C/W
°C/W
1/6
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