AOTF4185 参数 Datasheet PDF下载

AOTF4185

40V P-Channel MOSFET

Electrical Characteristics (T

J

=25°C unless otherwise noted)

Symbol

Parameter

Conditions

I

D

= -250µA, V

GS

= 0V

V

DS

= -40V, V

GS

= 0V

T

J

= 55°C

V

DS

= 0V, V

GS

= ±20V

V

DS

= V

GS

I

D

= -250µA

V

GS

= -10V, V

DS

= -5V

V

GS

= -10V, I

D

= -20A

R

DS(ON)

g

FS

V

SD

I

S

Static Drain-Source On-Resistance

V

GS

= -4.5V, I

D

= -15A

Forward Transconductance

Diode Forward Voltage

V

DS

= -5V, I

D

= -20A

I

S

= -1A,V

GS

= 0V

T

J

=125°C

-1.7

-120

13

19

16

50

-0.72

-1

-20

2550

V

GS

=0V, V

DS

=-20V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

2.5

280

190

4

42

V

GS

=-10V, V

DS

=-20V, I

D

=-20A

18.6

7

8.6

9.4

V

GS

=-10V, V

DS

=-20V,

R

L

= 1Ω, R

GEN

=3Ω

I

F

=-20A, dI/dt=500A/µs

20

55

30

25

75

33

6

55

16

23

20

S

V

A

pF

pF

pF

Ω

nC

nC

nC

nC

ns

ns

ns

ns

ns

nC

mΩ

-1.85

Min

-40

-1

-5

±100

-2.5

Typ

Max

Units

V

µA

nA

V

A

STATIC PARAMETERS

BV

DSS

Drain-Source Breakdown Voltage

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

g

(4.5V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-20A, dI/dt=500A/µs

A: The value of R

θJA

is measured with the device in a still air environment with T

A

=25°C.

B. The power dissipation P

D

is based on T

J(MAX)

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C: Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=175°C.

D. The R

θJA

is the sum of the thermal impedence from junction to case R

θJC

and case to ambient.

Continuous Drain Current

-20

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

-15

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T

J(MAX)

=175°C.

0

G. The maximum current rating is limited by bond-wires.

32

2/6

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