AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=560V
I
D
=9A
Capacitance (pF)
10000
C
iss
1000
C
oss
100
12
V
GS
(Volts)
9
6
3
10
C
rss
1
0
15
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
10
40
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
0
100
100
R
DS(ON)
limited
10µs
100µs
1
DC
0.1
T
J(Max)
=150°C
T
C
=25°C
0.01
1
10
100
V
DS
(Volts)
1000
10000
1
10
100
V
DS
(Volts)
1000
10000
T
J(Max)
=150°C
T
C
=25°C
1ms
10ms
0.1s
1s
10
I
D
(Amps)
R
DS(ON)
limited
10µs
100µs
I
D
(Amps)
10
1
DC
0.1
1ms
10ms
0.01
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT9N70 (Note F)
Figure 10: Maximum Forward Biased Safe
Operating Area for AOTF9N70 (Note F)
100
10
10µs
R
DS(ON)
limited
100µs
1ms
10ms
DC
8
6
4
2
1s
0
1
10
100
V
DS
(Volts)
1000
10000
0
25
50
75
T
CASE
(°C)
100
125
150
10
I
D
(Amps)
1
0.1
0.1s
T
J(Max)
=150°C
T
C
=25°C
0.01
Figure 11: Maximum Forward Biased Safe
Operating Area for AOTF9N70L (Note F)
Current rating I
D
(A)
Figure 12: Current De-rating (Note B)
4/6
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