AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
General Description
The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and
robustness in popular AC-DC applications. By providing low R
DS(on)
, C
iss
and C
rss
along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
800V@150℃
9A
< 1.2Ω
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
AOT9N70
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current
C
Repetitive avalanche energy
C
G
C
AOTF9N70
700
±30
9*
5.8*
33
3.2
77
154
5
50
0.4
-55 to 150
300
AOTF9N70L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
I
D
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
, T
STG
T
L
Symbol
R
θJA
R
θCS
AOT9N70
65
0.5
0.53
236
1.8
9
5.8
9*
5.8*
A
A
mJ
mJ
V/ns
W
W/
o
C
°
C
°
C
AOTF9N70L
65
--
4.5
Units
°
C/W
°
C/W
°
C/W
Single plused avalanche energy
Peak diode recovery dv/dt
T
C
=25°
C
Power Dissipation
B
Derate above 25
o
C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A,D
27.8
0.22
AOTF9N70
65
--
2.5
Maximum Case-to-sink
A
Maximum Junction-to-Case
R
θJC
* Drain current limited by maximum junction temperature.
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