AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
18
10V
15
12
I
D
(A)
9
6
3
V
GS
=5.5V
0
0
5
10
15
20
25
30
V
DS
(Volts)
Fig 1: On-Region Characteristics
3.0
Normalized On-Resistance
2.5
2.0
R
DS(ON)
(Ω)
Ω
1.5
1.0
V
GS
=10V
0.5
0.0
8
12
16
20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
0
4
3
2.5
2
1.5
1
0.5
0
-100
-50
0
50
100
150
200
V
GS
=10V
I
D
=4.5A
0.1
2
4
6
8
10
V
GS
(Volts)
Figure 2: Transfer Characteristics
6V
6.5V
I
D
(A)
10
125°C
1
25°C
100
V
DS
=40V
-55°C
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.2
1.0E+02
1.0E+01
BV
DSS
(Normalized)
1.1
1.0E+00
1
I
S
(A)
40
125°C
1.0E-01
1.0E-02
25°C
0.9
1.0E-03
0.8
-100
-50
0
50
100
150
200
T
J
(°C)
Figure 5:Break Down vs. Junction Temparature
1.0E-04
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/6
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