AOT298L/AOB298L/AOTF298L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
120
Power Dissipation (W)
Current rating I
D
(A)
60
90
40
60
20
30
0
0
100
125
150
175
T
CASE
(°
C)
Figure 17: Current De-rating for AOT298L and
AOB298L (Note F)
25
50
75
0
0
75
100
125
150
175
T
CASE
(°
C)
Figure 18: Power De-rating for AOT298L and
AOB298L (Note F)
25
50
100
I
AR
(A) Peak Avalanche Current
10000
T
A
=25°C
1000
T
A
=25°C
T
A
=100°C
T
A
=125°C
Power (W)
100
17
5
2
10
10
T
A
=150°C
10
1
10
100
Time in avalanche, t
A
(µs)
µ
Figure 19: Single Pulse Avalanche capability
(Note C)
1
0.00001
0.001
0.1
10
0
1000
18
Pulse Width (s)
Figure 20: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=60°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
P
D
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 21: Normalized Maximum Transient Thermal Impedance (Note H)
T
on
0.01
T
6/7
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