AOT298L/AOB298L/AOTF298L
100V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000.0
100.0
I
D
(Amps)
10.0
1.0
0.1
0.0
0.01
0.1
1
10
V
DS
(Volts)
100
1000
800
10µs
Power (W)
R
DS(ON)
limited
DC
600
T
J(Max)
=175°C
T
C
=25°C
100µs
1ms
10ms
T
J(Max)
=175°C
T
C
=25°C
400
200
0
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case for
17
AOTF298L (Note F)
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF298L
(Note F)
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=4.5°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
5
2
10
0
18
0.1
P
D
T
on
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF298L (Note F)
0.1
1
T
40
10
100
50
40
40
Current rating I
D
(A)
Power Dissipation (W)
30
30
20
20
10
10
0
0
100
125
150
T
CASE
(°C)
°
Figure 15: Current De-rating for AOTF298
F)
25
50
75
175
(Note
0
100
125
150
T
CASE
(°C)
°
Figure 16: Power De-rating for AOTF298L
F)
25
50
75
175
(Note
0
5/7
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