AOT298L/AOB298L/AOTF298L
100V N-Channel MOSFET
General Description
The AOT298L & AOB298L & AOTF298L uses Trench MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance. Power losses are minimized due to an extremely low
combination of R
DS(ON)
and C
rss
. In addition, switching behavior is well controlled with a soft recovery body
diode.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
100V
58A/33A
< 14.5mΩ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
AOT298L/AOB298L
V
DS
Drain-Source Voltage
100
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
AOTF298L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
C
T
A
=25°
C
T
A
=70°
I
D
I
DM
I
DSM
I
AS
, I
AR
E
AS
, E
AR
P
D
P
DSM
T
J
, T
STG
100
50
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
C
T
A
=70°
58
41
±20
33
26
130
9
7
20
20
33
16
2.1
1.33
-55 to 175
A
A
A
mJ
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
AOT298L/AOB298L
15
60
1.5
AOTF298L
15
60
4.5
Units
°
C/W
°
C/W
°
C/W
1/7
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