AOT266L/AOB266L/AOTF266L
60V N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=30V
I
D
=20A
8
6000
Capacitance (pF)
V
GS
(Volts)
6
5000
4000
3000
2000
2
1000
0
0
30
40
50
60
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
10
20
70
0
0
20
30
40
50
V
DS
(Volts)
Figure 8: Capacitance Characteristics
10
60
C
rss
C
oss
8000
7000
C
iss
4
1000.0
100.0
I
D
(Amps)
10.0
600
R
DS(ON)
10µs
10µs
100µs
Power (W)
500
400
300
200
100
T
J(Max)
=175°C
T
C
=25°C
1ms
10ms
DC
T
J(Max)
=175°C
T
C
=25°C
1.0
0.1
0.0
0.01
17
5
2
10
1
10
100
1000
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT266L and AOB266L (Note F)
0.1
0.001
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOT266L and AOB266L (Note F)
0.01
0.1
1
10
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=0.56°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
Single Pulse
P
D
T
on
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT266L and AOB266L (Note F)
4/7
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