AOT266L/AOB266L/AOTF266L
60V N-Channel MOSFET
General Description
The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance. Both conduction and switching power losses are
minimized due to an extremely low combination of R
DS(ON)
Ciss and Coss. This device is ideal for boost converters
and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
V
DS
I
D
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=10V)
R
DS(ON)
(at V
GS
=6V)
60V
140A/78A
< 3.5mΩ (< 3.2mΩ
∗
)
< 4.0mΩ (< 3.8mΩ
∗
)
D
G
S
C
Absolute Maximum Ratings T
A
=25° unless otherwise noted
Symbol
AOT266L/AOB266L
Parameter
Drain-Source Voltage
V
DS
60
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Continuous Drain
Current
Avalanche Current
C
Avalanche energy L=0.1mH
Power Dissipation
Power Dissipation
B
C
C
AOTF266L
Units
V
V
V
GS
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
C
T
A
=70°
I
D
I
DM
I
DSM
I
AS
E
AS
P
D
P
DSM
T
J
, T
STG
268
134
T
C
=25°
C
T
C
=100°
C
T
A
=25°
C
T
A
=70°
C
140
110
±20
78
55
450
18
14
90
405
45.5
22.5
2.1
1.3
-55 to 175
A
A
A
mJ
W
W
°
C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Case
* Surface mount package TO263
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
AOT266L/AOB266L
15
60
0.56
AOTF266L
15
60
3.3
Units
°
C/W
°
C/W
°
C/W
1/7
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
