AOT266L 参数 Datasheet PDF下载

AOT266L/AOB266L/AOTF266L

60V N-Channel MOSFET

C

Electrical Characteristics (T

J

=25° unless otherwise noted)

Symbol

Parameter

Conditions

I

D

=250µA, V

GS

=0V

V

DS

=60V, V

GS

=0V

C

T

J

=55°

V

DS

=0V, V

GS

=±20V

V

DS

=V

GS，

I

D

=250µA

V

GS

=10V, V

DS

=5V

V

GS

=10V, I

D

=20A

TO220/TO220F

V

GS

=6V, I

D

=20A

R

DS(ON)

Static Drain-Source On-Resistance

TO220/TO220F

V

GS

=10V, I

D

=20A

TO263

V

GS

=6V, I

D

=20A

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

TO263

V

DS

=5V, I

D

=20A

I

S

=1A,V

GS

=0V

G

Min

60

Typ

Max

Units

V

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

1

5

±100

2.2

450

2.9

C

T

J

=125°

4.9

3.2

2.6

3

80

0.65

1

140

5650

3.5

5.9

4

3.2

3.8

2.7

3.2

µA

nA

V

A

mΩ

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

V

GS

=0V, V

DS

=0V, f=1MHz

0.4

V

GS

=0V, V

DS

=30V, f=1MHz

720

20

0.9

65

1.4

90

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

SWITCHING PARAMETERS

Q

g

(10V) Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

I

F

=20A, dI/dt=500A/µs

1in

2

V

GS

=10V, V

DS

=30V, I

D

=20A

20

7

21

V

GS

=10V, V

DS

=30V, R

L

=1.5Ω,

R

GEN

=3Ω

20

36

6

27

145

Body Diode Reverse Recovery Charge I

F

=20A, dI/dt=500A/µs

A. The value of R

θJA

is measured with the device mounted on

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C. The

Power dissipation P

DSM

is based on R

θJA

and the maximum allowed junction temperature of 150°C. The value in any given application

depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.

B. The power dissipation P

D

is based on T

J(MAX)

=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=175°C. Ratings are based on low frequency and duty cycles to keep

initial T

J

=25°C.

D. The R

θJA

is the sum of the thermal impedance from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,

assuming a maximum junction temperature of T

J(MAX)

=175°C. The SOA curve provides a single pulse rating.

G. The maximum current limited by package.

H. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°C.

2/7

www.freescale.net.cn