AOT16N50/AOTF16N50
500V, 16A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
V
DS
=400V
I
D
=16A
1000
Capacitance (pF)
C
oss
100
C
rss
10
3
V
GS
(Volts)
9
10000
C
iss
12
6
0
0
10
30
40
50
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
20
60
1
0.1
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
1
100
100
10µs
10
I
D
(Amps)
R
DS(ON)
limited
100µs
1ms
10ms
0.1s
DC
T
J(Max)
=150°
C
C
T
C
=25°
100
10µs
10
I
D
(Amps)
R
DS(ON)
limited
100µs
1
DC
0.1
T
J(Max)
=150°
C
T
C
=25°
C
1ms
10ms
0.1s
1s
10s
1
0.1
0.01
1
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area for AOT16N50 (Note F)
10
1000
0.01
1
100
1000
V
DS
(Volts)
Figure 10: Maximum Forward Biased Safe Operating
Area for AOTF16N50 (Note F)
10
18
15
Current rating I
D
(A)
12
9
6
3
0
0
25
50
75
100
125
150
C)
T
CASE
(°
Figure 11: Current De-rating (Note B)
4/6
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