AOT16N50 参数 Datasheet PDF下载

AOT16N50/AOTF16N50

500V, 16A N-Channel MOSFET

Electrical Characteristics (T

J

=25° unless otherwise noted)

C

Symbol

STATIC PARAMETERS

BV

DSS

BV

DSS

/∆TJ

I

DSS

I

GSS

V

GS(th)

R

DS(ON)

g

FS

V

SD

I

S

I

SM

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

Static Drain-Source On-Resistance

Forward Transconductance

Diode Forward Voltage

Maximum Body-Diode Pulsed Current

1531

V

GS

=0V, V

DS

=25V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

153

11

1.75

34

V

GS

=10V, V

DS

=400V, I

D

=16A

7.5

16

V

GS

=10V, V

DS

=250V, I

D

=16A,

R

G

=25Ω

I

F

=16A,dI/dt=100A/µs,V

DS

=100V

265

4.5

1914

191

16

3.5

42.8

9.3

20.3

44

84

92

50

334

6

400

7.5

I

D

=250µA, V

GS

=0V, T

J

=25°

C

I

D

=250µA, V

GS

=0V, T

J

=150°

C

ID=250µA, VGS=0V

V

DS

=500V, V

GS

=0V

V

DS

=400V, T

J

=125°

C

V

DS

=0V, V

GS

=±30V

V

DS

=5V, I

D

=250µA

V

GS

=10V, I

D

=8A

V

DS

=40V, I

D

=8A

I

S

=1A,V

GS

=0V

3.3

4

0.29

20

0.71

1

16

64

2297

229

20

5.3

51

11

24

500

600

0.5

1

10

±100

4.5

0.37

V

V/

o

C

µA

nΑ

V

Ω

S

V

A

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

µC

Parameter

Conditions

Min

Typ

Max

Units

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Q

g

Total Gate Charge

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=16A,dI/dt=100A/µs,V

DS

=100V

A. The value of R

θJA

is measured with the device in a still air environment with T

A

=25°

C.

B. The power dissipation P

D

is based on T

J(MAX)

=150° using junction-to-case thermal resistance, and is more useful in setting the upper

C,

dissipation limit for cases where additional heatsinking is used.

C,

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150° Ratings are based on low frequency and duty cycles to keep initial T

J

=25°

C.

D. The R

θJA

is the sum of the thermal impedance from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300

µs

pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

C.

maximum junction temperature of T

J(MAX)

=150° The SOA curve provides a single pulse ratin g.

C

G. L=60mH, I

AS

=6A, V

DD

=150V, R

G

=25Ω, Starting T

J

=25°

2/6

www.freescale.net.cn