AOT16N50/AOTF16N50
500V, 16A N-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
32
10V
28
24
20
I
D
(A)
16
12
8
4
0
0
5
15
20
25
V
DS
(Volts)
Fig 1: On-Region Characteristics
10
30
0.1
2
6
8
V
GS
(Volts)
Figure 2: Transfer Characteristics
4
10
V
GS
=5.5V
I
D
(A)
6V
10
125°
C
6.5V
100
V
DS
=40V
-55°
C
1
25°
C
0.7
3
2.5
2
1.5
1
0.5
0
0
4
8
12
16
20
24
28
32
-100
-50
0
50
100
150
200
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
1.0E+01
Normalized On-Resistance
0.6
V
GS
=10V
I
D
=8A
R
DS(ON)
(
Ω
)
0.5
V
GS
=10V
0.4
0.3
0.2
1.2
BV
DSS
(Normalized)
1.1
1.0E+00
I
S
(A)
1.0E-01
40
125°
C
1
25°
C
1.0E-02
1.0E-03
0.9
1.0E-04
0.8
-100
-50
0
50
100
150
200
T
J
(°
C)
Figure 5:Break Down vs. Junction Temparature
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
3/6
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