AON7407
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1000
-I
AR
(A) Peak Avalanche Current
40
Power Dissipation (W)
30
T
A
=25°
C
100
T
A
=150°
C
T
A
=125°
C
T
A
=100°
C
20
10
10
1
10
100
1000
Time in avalanche, t
A
(µs)
µ
Figure 12: Single Pulse Avalanche capability
(Note C)
0
0
25
50
75
100
125
150
C)
T
CASE
(°
Figure 13: Power De-rating (Note F)
50
10000
T
A
=25°
C
-Current rating I
D
(A)
40
1000
Power (W)
30
100
20
17
5
2
10
10
10
0
0
25
50
75
100
125
150
C)
T
CASE
(°
Figure 14: Current De-rating (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=75°
C/W
1
0.00001
0
0.1
10
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating
Junction-to-Ambient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single
pulse
0.001
1000
40
0.1
0.01
Single Pulse
0.001
0.00001
P
D
T
on
0.01
0.1
1
10
T
100
1000
0.0001
0.001
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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