AON7407
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
-8V
80
-2.5V
-3V
-4.5V
-I
D
(A)
60
-1.5V
-1.8V
60
V
DS
=-5V
40
-I
D
(A)
20
40
125°
C
25°
C
20
V
GS
=-1V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
14
12
R
DS(ON)
(m
Ω
)
10
8
6
4
0
15
20
25
30
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
5
10
V
GS
=-4.5V
V
GS
=-2.5V
Normalized On-Resistance
V
GS
=-1.8V
1.6
V
GS
=-4.5V
I
D
=-14A
V
GS
=-2.5V
17
I
D
5
=-13A
0
0
0.5
1
1.5
2
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
1.4
1.2
1
2
V
GS
=-1.8V
10
I
D
=-11A
0.8
0
75
100 125 150
Temperature (°
C)
0
Figure 4: On-Resistance vs. Junction
18
Temperature (Note E)
25
50
175
25
I
D
=-14A
1.0E+02
1.0E+01
20
R
DS(ON)
(m
Ω
)
1.0E+00
-I
S
(A)
15
125°
C
10
1.0E-01
1.0E-02
1.0E-03
5
25°
C
1.0E-04
1.0E-05
0
2
4
6
8
40
125°
C
25°
C
0
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note
E)
3/6
www.freescale.net.cn