AON7407 参数 Datasheet PDF下载

AON7407

20V P-Channel MOSFET

C

Electrical Characteristics (T

J

=25° unless otherwise noted)

Symbol

Parameter

Conditions

I

D

=-250µA, V

GS

=0V

V

DS

=-20V, V

GS

=0V

T

J

=55°

C

V

DS

=0V, V

GS

= ±8V

V

DS

=V

GS

, I

D

=-250µA

V

GS

=-4.5V, V

DS

=-5V

V

GS

=-4.5V, I

D

=-14A

R

DS(ON)

Static Drain-Source On-Resistance

T

J

=125°

C

V

GS

=-2.5V, I

D

=-13A

V

GS

=-1.8V, I

D

=-11A

g

FS

V

SD

I

S

Forward Transconductance

Diode Forward Voltage

V

DS

=-5V, I

D

=-14A

I

S

=-1A,V

GS

=0V

-0.3

-100

7.6

10.5

9.3

11.4

72

-0.52

-1

-35

2795

V

GS

=0V, V

DS

=-10V, f=1MHz

V

GS

=0V, V

DS

=0V, f=1MHz

35

V

GS

=-4.5V, V

DS

=-10V, I

D

=-14A

365

255

3495

528

425

2.8

44

9

11

18

V

GS

=-4.5V, V

DS

=-10V,

R

L

=0.75Ω, R

GEN

=3Ω

26

80

32

136

59

33

100

40

120

4195

690

595

5.6

53

9.5

13.5

12.5

18

-0.55

Min

-20

-1

-5

±100

-0.9

Typ

Max

Units

V

µA

nA

V

A

mΩ

mΩ

mΩ

S

V

A

pF

pF

pF

Ω

nC

nC

nC

ns

ns

ns

ns

ns

nC

STATIC PARAMETERS

Drain-Source Breakdown Voltage

BV

DSS

I

DSS

I

GSS

V

GS(th)

I

D(ON)

Zero Gate Voltage Drain Current

Gate-Body leakage current

Gate Threshold Voltage

On state drain current

Maximum Body-Diode Continuous Current

DYNAMIC PARAMETERS

C

iss

Input Capacitance

C

oss

C

rss

R

g

Output Capacitance

Reverse Transfer Capacitance

Gate resistance

SWITCHING PARAMETERS

Total Gate Charge

Q

g

Q

gs

Q

gd

t

D(on)

t

r

t

D(off)

t

f

t

rr

Q

rr

Gate Source Charge

Gate Drain Charge

Turn-On DelayTime

Turn-On Rise Time

Turn-Off DelayTime

Turn-Off Fall Time

I

F

=-14A, dI/dt=500A/µs

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge I

F

=-14A, dI/dt=500A/µs

A. The value of R

θJA

is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25° The Power

C.

C.

dissipation P

DSM

is based on R

θJA

t

≤

10s value and the maximum allowed junction temperature of 150° The value in any given application

depends on the user's specific board design.

C,

B. The power dissipation P

D

is based on T

J(MAX)

=150° using junction-to-case thermal resistance, and is more useful in setting the upper dissipation

limit for cases where additional heatsinking is used.

C.

C. Repetitive rating, pulse width limited by junction temperature T

J(MAX)

=150° Ratings are based on low frequency and duty cycles to keep initial T

J

=25°

C.

D. The R

θJA

is the sum of the thermal impedance from junction to case R

θJC

and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a

maximum junction temperature of T

J(MAX)

=150° The SOA curve provides a single pulse ratin g.

C.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in

2

FR-4 board with 2oz. Copper, in a still air environment with T

A

=25°

C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

2/6

www.freescale.net.cn