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AON5810 参数 Datasheet PDF下载

AON5810图片预览
型号: AON5810
PDF下载: 下载PDF文件 查看货源
内容描述: 常见的漏双N Channrl增强型场效应晶体管 [Common-Drain Dual N-Channrl Enhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 4 页 / 546 K
品牌: SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
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AON5810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=10V
I
D
=7.7A
A
Capacitance (pF)
2400
C
iss
1800
4
V
GS
(Volts)
3
1200
2
0.5
600
C
oss
1
1
0
0
3
6
9
12
15
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
100.0
10µs
Power (W)
0
0
C
rss
10
V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
15
200
160
120
80
40
0
0.0001
0.1
1
10
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note E)
T
J(Max)
=150°
C
C
T
A
=25°
10.0
I
D
(Amps)
R
DS(ON)
limited
100µs
1.0
DC
T
J(Max)
=150° T
A
=25°
C,
C
0.1
1ms
10ms
100ms
1s
10s
10
Z
θ
JC
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJA
R
θJA
=75°
C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
T
100
1000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
4/4
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