AON5810
Common-Drain Dual N-Channrl Enhancement
Mode Field Effect Transistor
General Description
The AON5810 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and
operation with gate voltages as low as 1.8V while retaining a 12V V
GS(MAX)
rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi- directional load switch, facilitated by its common-drain
configuration.
Standard Product AON5810 is Pb-free (meets ROHS & Sony 259 specifications). AON5810L
is a Green Product ordering option. AON5810 and AON5810L are electrically identical.
Features
V
DS
(V) = 20V
I
D
= 7.7 A (V
GS
= 4.5V)
R
DS(ON)
< 18 mΩ (V
GS
= 4.5V)
R
DS(ON)
< 19 m (V
GS
= 4.0V)
R
DS(ON)
< 21 m (V
GS
= 3.1V)
R
DS(ON)
< 25 mΩ (V
GS
= 2.5V)
R
DS(ON)
< 40 mΩ (V
GS
= 1.8V)
ESD Rating: 2000V HBM
DFN 2X5
S2
S1
G1
S1
G2
D1
S2
D2
D1/D2
G1
S1
S2
S2
G1
S1
S1
S2
G2
Top View
G2
Bottom View
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
V
DS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current R
θJA
=75°
C/W
Pulsed Drain Current
A
B
Maximum
20
±12
7.7
6.1
30
1.6
1.0
-55 to 150
Units
V
V
GS
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
DSM
T
J
, T
STG
A
T
A
=25°
C
Power Dissipation
R
θJA
=75°
C/W
T
A
=70°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
W
°
C
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
30
61
4.5
Max
40
75
6
Units
°
C/W
°
C/W
°
C/W
1/4
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
