AON5810
Electrical Characteristics (T
J
=25° unless otherwise noted)
C
Symbol
Parameter
Conditions
I
D
=250µA, V
GS
=0V
V
DS
=16V, V
GS
=0V
T
J
=55°
C
V
DS
=0V, V
GS
=±10V
V
DS
=0V, I
G
=±250uA
V
DS
=V
GS
, I
D
=250µA
V
GS
=4.5V, V
DS
=5V
V
GS
=4.5V, I
D
=7.7A
T
J
=125°
C
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.0V, I
D
=6A
V
GS
=3.1V, I
D
=6A
V
GS
=2.5V, I
D
=5A
V
GS
=1.8V, I
D
=4A
g
FS
V
SD
I
S
Forward Transconductance
Diode Forward Voltage
V
DS
=5V, I
D
=7.7A
I
S
=1A,V
GS
=0V
0.5
±12
0.5
30
11
16
11
13
15
25
14
21
14.5
16.7
20
32
28
0.74
1
2.5
1360
V
GS
=0V, V
DS
=10V, f=1MHz
V
GS
=0V, V
DS
=0V, f=1MHz
200
178
1.5
13.1
V
GS
=4.5V, V
DS
=10V, I
D
=7.7A
2
3.9
6.2
V
GS
=5V, V
DS
=10V, R
L
=1.4Ω,
R
GEN
=3Ω
I
F
=7.7A, dI/dt=100A/µs
11
40.5
10
18.8
8.1
18
26
19
21
25
40
0.73
1
Min
20
1
5
10
Typ
Max
Units
V
µA
µA
V
V
A
mΩ
mΩ
mΩ
mΩ
mΩ
S
V
A
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
ns
nC
STATIC PARAMETERS
BV
DSS
Drain-Source Breakdown Voltage
I
DSS
I
GSS
BV
GSO
V
GS(th)
I
D(ON)
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate-Source Breakdown Voltage
Gate Threshold Voltage
On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
C
iss
Input Capacitance
C
oss
C
rss
R
g
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
SWITCHING PARAMETERS
Q
g
(4.5V) Total Gate Charge
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=7.7A, dI/dt=100A/µs
A: The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The value
C.
in any given application depends on the user's specific board design. The current rating is based on the t
≤
10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R
θJA
is the sum of the thermal impedence from junction to lead R
θJL
and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80
µs
pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25° The SOA
C.
curve provides a single pulse rating.
Rev 1: Sep. 2007
2/4
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