AON4407
12V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
4.5
4
3.5
-V
GS
(Volts)
3
2.5
2
1.5
1
0.5
0
0
4
8
12
16
20
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
400
0
0
C
rss
2
4
6
8
10
12
V
DS
=-6V
I
D
=-9A
Capacitance (pF)
2800
2400
2000
1600
1200
800
C
oss
C
iss
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
10µs
10
-I
D
(Amps)
R
DS(ON)
limited
1ms
1000
T
J(Max)
=150°C
T
A
=25°C
10ms
1
100ms
DC
0.1
T
J(Max)
=150°C
T
A
=25°C
0.1
1
-V
DS
(Volts)
10s
Power (W)
100
10
0.01
0.01
I
F
=-6.5A, dI/dt=100A/µs
10
100
1
0.00001
0.001
0.1
10
1000
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
to-Ambient (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=90°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
P
D
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
0.01
T
on
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
4/5
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