AON4407 参数 Datasheet PDF下载

AON4407

12V P-Channel MOSFET

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

60

50

40

-I

D

(A)

-I

D

(A)

-2V

30

20

10

0

0

1

2

3

4

5

-V

DS

(Volts)

Figure 1: On-Region Characteristics(Note E)

45

Normalized On-Resistance

40

35

R

DS(ON)

(m

Ω

)

30

25

20

15

V

GS

=-4.5V

10

0

2

4

6

8

10

V

GS

=-2.5V

V

GS

=-1.8V

V

GS

=-1.5V

1.6

1.5

1.4

1.3

1.2

1.1

1.0

0.9

0.8

0

25

50

75

100

125

150

175

Temperature (°C)

Figure 4: On-Resistance vs. Junction

Temperature(Note E)

V

GS

=-1.5V

I

D

=-7A

V

GS

=-1.8V

I

D

=-7.5A

V

GS

=-4.5V

I

D

=-9A

V

GS

=-1.5V

-4.5V

-3V

40

30

20

10

0

0

0.5

1

1.5

2

2.5

3

-V

GS

(Volts)

Figure 2: Transfer Characteristics(Note E)

125°C

25°C

-2.5V

60

50

V

DS

=-5V

I

12 14 16 18 20

F

=-6.5A, dI/dt=100A/µs

-I

D

(A)

Figure 3: On-Resistance vs. Drain Current and

Gate Voltage(Note E)

50

45

40

R

DS(ON)

(m

Ω

)

-I

S

(A)

35

30

I

D

=-9A

1E+01

1E+00

1E-01

125°C

1E-02

125°C

25°C

25

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

1E-03

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

20

1E-04

OUT OF 15

SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

25°C

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

10

1E-05

0

2

4

6

8

0.0

0.2

0.4

0.6

0.8

1.0

-V

GS

(Volts)

Figure 5: On-Resistance vs. Gate-Source

Voltage(Note E)

-V

SD

(Volts)

Figure 6: Body-Diode Characteristics(Note E)

3/5

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