AON4407
12V P-Channel MOSFET
General Description
The AON4407 uses advanced trench technology to provide excellent R
DS(ON)
, low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable for use as a load switch.
Features
V
DS
(V) = -12V
I
D
= -9 A
R
DS(ON)
< 20m
R
DS(ON)
< 25m
R
DS(ON)
< 31m
(V
GS
= -4.5V)
(V
GS
= -4.5V)
(V
GS
= -2.5V)
(V
GS
= -1.8V)
DFN 3x2
Top View
Pin 1
Bottom View
D
D
D
G
D
D
D
S
G
D
Rg
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
C
Power Dissipation
B
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
I
D
I
DM
P
D
T
J
, T
STG
V
GS
Maximum
-12
±8
-9
-7
-60
2.5
1.6
-55 to 150
Units
V
V
A
W
°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
Symbol
A
AD
t ≤ 10s
Steady State
Steady State
R
θJA
R
θJL
Typ
42
74
25
Max
50
90
30
Units
°C/W
°C/W
°C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
