AON1611
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
V
DS
=-10V
I
D
=-4A
4
Capacitance (pF)
800
C
iss
1000
-V
GS
(Volts)
3
600
2
400
C
oss
1
200
C
rss
0
0
0
4
6
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
2
8
0
10
15
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
20
100.0
10µs 10µs
Power (W)
R
DS(ON)
limited
1.0
100µs
1ms
10ms
100ms
1s
DC
200
160
120
80
40
0
0.01
0.1
1
-V
DS
(Volts)
10
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note H)
T
J(Max)
=150°C
T
A
=25°C
10.0
-I
D
(Amps)
0.1
T
J(Max)
=150°C
T
A
=25°C
0.0
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
1
R
θJA
=110°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
0.01
Single Pulse
T
on
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note H)
T
4/5
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