AON1611
20V P-Channel MOSFET
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
-4.5V
15
-1.8V
-I
D
(A)
-I
D
(A)
10
-1.5V
5
V
GS
=-1.0V
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics (Note E)
120
100
R
DS(ON)
(mΩ)
Ω
80
60
40
20
0
0
4
6
8
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
2
V
GS
=-2.5V
Normalized On-Resistance
V
GS
=-1.5V
V
GS
=-1.8V
0
0
0.5
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics (Note E)
5
25°C
10
125°C
-2.5V
15
20
V
DS
=-5V
1.6
V
GS
=-4.5V
I
D
=-4A
1.4
V
GS
=-2.5V
I
D
=-3A
1.2
V
GS
=-1.8V
I
D
=-2A
V
GS
=-1.5V
I
D
=-1A
V
GS
=-4.5V
1
0.8
0
25
50
75
100
125
150
175
200
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
140
I
D
=-4A
120
-I
S
(A)
100
R
DS(ON)
(mΩ)
Ω
80
60
40
20
0
2
3
4
5
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
1
125°C
1.0E+01
1.0E+00
1.0E-01
1.0E-02
25°C
1.0E-03
1.0E-04
1.0E-05
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics (Note E)
0.0
0.2
125°C
25°C
3/5
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