AON1611
20V P-Channel MOSFET
General Description
The AON1611 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R
DS(ON)
. This device is ideal for load switch and battery protection applications.
Features
V
DS
I
D
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-4.5V)
R
DS(ON)
(at V
GS
=-2.5V)
R
DS(ON)
(at V
GS
=-1.8V)
R
DS(ON)
(at V
GS
=-1.5V)
-20V
-4A
< 58mΩ
< 76mΩ
< 98mΩ
< 120mΩ
D
G
S
Absolute Maximum Ratings T
A
=25° unless otherwise noted
C
Parameter
Symbol
Drain-Source Voltage
V
DS
Gate-Source Voltage
Continuous Drain
Current
G
Pulsed Drain Current
Power Dissipation
A
C
Maximum
-20
±8
-4
-3
-16
1.8
1.15
-55 to 150
Units
V
V
A
V
GS
C
T
A
=25°
T
A
=70°
C
T
A
=25°
C
T
A
=70°
C
I
D
I
DM
P
D
T
J
, T
STG
W
°
C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A D
Symbol
t
≤
10s
Steady-State
R
θJA
Typ
56
88
Max
70
110
Units
°
C/W
°
C/W
1/5
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
