AOL1413
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
70
60
50
I
D
(A)
40
30
20
10
0
0
2
3
4
V
DS
(Volts)
Figure 1: On-Region Characteristics
1
5
-5V
-4.5V
5
V
GS
=-4V
0
2
2.5
3.5
4
4.5
V
GS
(Volts)
Figure 2: Transfer Characteristics
3
5
15
I
D
(A)
-10V
25
V
DS
=-5V
125°C
20
10
25°C
40.0
1.8
I
D
=-20A
Normalized On-Resistance
30.0
R
DS(ON)
(mΩ)
V
GS
=-5V
20.0
1.6
V
GS
=-10V
1.4
1.2
V
GS
=-5V
10.0
V
GS
=-10V
0.0
0
5
10
15
20
25
1
0.8
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1.0E+02
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
50
I
D
=20A
40
125°C
R
DS(ON)
(mΩ)
1.0E+01
1.0E+00
I
S
(A)
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125°C
30
T
C
=100°C
20
25°C
T
A
=25°C
10
-55 to 175
25°C
0
0
5
10
15
20
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.0
0.4
0.6
0.8
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.2
1.0
3/6
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