AOL1413
P-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOL1413 uses advanced trench technology to provide excellent R
DS(ON)
and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is
ESD protected.
Features
V
DS
(V) = -30V
I
D
= -38A (V
GS
= -10V)
R
DS(ON)
< 17mΩ (V
GS
= -10V)
R
DS(ON)
< 36mΩ (V
GS
= -5V)
Ultra
SO-8
TM
Top View
D
Bottom tab
connected to
drain
G
G
D
S
S
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Parameter
Symbol
V
DS
Drain-Source Voltage
V
GS
Gate-Source Voltage
Continuous Drain
Current
B
Pulsed Drain Current
Continuous Drain
Current
A
Power Dissipation
Power Dissipation
B
Maximum
-30
±25
-38
-27
-70
-9
-7
38
19
2.1
1.3
-55 to 175
Units
V
V
T
C
=25°C
T
C
=100°C
C
I
D
I
DM
I
DSM
P
D
P
DSM
T
J
, T
STG
A
T
A
=25°C
T
A
=70°C
T
C
=25°C
T
C
=100°C
T
A
=25°C
A
W
W
°C
T
A
=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
A
Maximum Junction-to-Ambient
A
Maximum Junction-to-Case
B
Symbol
t
≤
10s
Steady-State
Steady-State
R
θJA
R
θJC
Typ
18
49
2.9
Max
25
60
4
Units
°C/W
°C/W
°C/W
1/6
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SHENZHENFREESCALE [ ShenZhen FreesCale Electronics. Co., Ltd ]
