AOD421
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
14
12
10
8
6
4
2
0
0
25
75
100
125
150
T
CASE
(°C)
Figure 12: Current De-rating (Note B)
50
175
Power Dissipation (W)
Current rating I
D
(A)
20
18
16
14
12
10
8
6
4
2
0
0
25
50
75
100
125
150
175
T
CASE
(°C)
Figure 13: Power De-rating (Note B)
100
T
J(Max)
=150°C, T
A
=25°C
10µs
10
I
D
(Amps)
100µs
Power (W)
50
T
A
=25°C
40
30
1ms
1
R
DS(ON)
limited
0.1
0.1
10
V
DS
(Volts)
Figure 14: Maximum Forward Biased
Safe Operating Area (Note H)
1
100
DC
100m
1s
10s
20
10
0
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=60°C/W
0.01
P
D
T
on
Single Pulse
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
5/6
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