AOD421
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
-10.0V
35
8
30
25
-I
D
(A)
20
15
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
160
V
GS
=-2.5V
Normalized On-Resistance
140
120
R
DS(ON)
(m
Ω
)
100
80
60
V
GS
=-10V
40
20
0
2
4
6
8
10
12
14
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=-4.5V
1.6
I
D
=-3A, V
GS
=-4.5V
1.4
I
D
=-12.5A, V
GS
=-10V
-5.0V
-4.0V
-3.0V
-2.5V
-2.0V
V
GS
=-1.5V
0
0
0.5
1
1.5
2
2.5
3
3.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
-I
D
(A)
6
10
V
DS
=-5V
4
125°C
2
25°C
1.2
I
D
=-1A, V
GS
=-2.5V
1.0
0.8
0
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
200
180
160
R
DS(ON)
(m
Ω
)
-I
S
(A)
140
120
100
80
125°C
I
D
=-12.5A
1E+01
1E+00
125°C
1E-01
1E-02
1E-03
1E-04
1E-05
25°C
60
40
0
25°C
1E-06
0.0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
3/6
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