AOD421
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
I
D
=-12.5A
4
Capacitance (pF)
-V
GS
(Volts)
C
iss
600
800
3
400
2
1
200
C
rss
C
oss
0
0
1
2
3
4
5
6
-Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
100
T
J(Max)
=175C, T
A
=25°C
10µs
Power (W)
10
I
D
(Amps)
100µs
100
90
80
70
60
50
40
30
20
10
0
0.0001
0.001
0.01
0.1
1
10
100
T
J(Max)
=175°C
T
C
=25°C
DC
1
R
DS(ON)
limited
0.1
0.1
1
10
1ms
100
V
DS
(Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
case (Note F)
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
C
+P
DM
.Z
θJC
.R
θJC
R
θJC
=8°C/W
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
P
D
T
on
Single Pulse
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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