AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
V
DS
=-20V
I
D
=-12A
Capacitance (pF)
2800
2400
C
iss
2000
1600
1200
800
C
rss
400
0
0
5
10
15
20
25
30
35
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
0
0
5
10
15
20
25
30
35
40
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
C
oss
8
-V
GS
(Volts)
6
4
2
100
10µs
Power (W)
-I
D
(Amps)
100µs
10
R
DS(ON)
limited
1ms
T
J(Max)
=175°C
T
C
=25°C
1
1
10
-V
DS
(Volts)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
100
10ms
DC
10000
T
J(Max)
=175°C
T
C
=25°C
1000
100
10
0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
Z
θ
Jc
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
c
+P
DM
.Z
θJC
.R
θJC
R
θJC
=2.4°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
150
mJ
1
0.1
P
D
T
on
Single Pulse
T
0.1
1
0.01
0.00001
0.0001
0.001
0.01
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
4/6
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