AOD4189
P-Channel Enhancement Mode Field
Effect Transistor
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
-10V
40
-6.0V
-I
D
(A)
V
GS
=-3.5V
20
-I
D
(A)
30
30
20
-4.5V
-4.0V
40
50
V
DS
=-5V
10
0
0
1
2
3
4
5
-V
DS
(Volts)
Figure 1: On-Region Characteristics
10
125°C
25°C
0
1.5
2
2.5
3
3.5
4
4.5
-V
GS
(Volts)
Figure 2: Transfer Characteristics
30
Normalized On-Resistance
28
26
R
DS(ON)
(m
Ω
)
24
22
20
18
16
0
10
20
30
40
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
V
GS
=-10V
V
GS
=-4.5V
2
1.8
1.6
1.4
1.2
1
0.8
-50 -25
0
25
50
75 100 125 150 175 200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
100
I
D
=-12A
V
GS
=-4.5V
I
D
=-8A
V
GS
=-10V
I
D
=-12A
55
50
45
R
DS(ON)
(m
Ω
)
-I
S
(A)
40
35
30
125°C
150
10
1
0.1
0.01
0.001
125°C
25°C
mJ
25
20
15
3
4
5
6
7
25°C
0.0001
0.00001
8
9
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
3/6
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