AOD4189 参数 Datasheet PDF下载

AOD4189

P-Channel Enhancement Mode Field

Effect Transistor

General Description

The AOD4189 uses advanced trench technology and design to provide excellent R

DS(ON)

with low gate

charge. With the excellent thermal resistance of the DPAK package, this device is well suited for high

current load applications.

Features

V

DS

(V) = -40V

I

D

= -40A

(V

GS

= -10V)

R

DS(ON)

< 22mΩ (V

GS

= -10V)

R

DS(ON)

< 29mΩ (V

GS

= -4.5V)

D

G

S

Absolute Maximum Ratings T

C

=25°C unless otherwise noted

Symbol

Parameter

V

DS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain

Current

B,H

Pulsed Drain Current

Avalanche Current

C

Repetitive avalanche energy L=0.1mH

T

C

=25°C

Power Dissipation

Power Dissipation

B

C

C

Maximum

-40

±20

-40

-28

-50

-35

61

62.5

31

2.5

1.6

-55 to 175

Units

V

V

V

GS

T

C

=25°C

T

C

=100°C

I

D

I

DM

I

AR

E

AR

P

D

P

DSM

T

J

, T

STG

A

mJ

T

C

=100°C

T

A

=25°C

T

A

=70°C

W

A

Junction and Storage Temperature Range

Thermal Characteristics

Parameter

A,G

Maximum Junction-to-Ambient

Maximum Junction-to-Ambient

A,G

Maximum Junction-to-Case

D,F

°C

Symbol

t ≤ 10s

Steady-State

Steady-State

R

θJA

R

θJC

Typ

15

41

2

Max

20

50

2.4

Units

°C/W

°C/W

°C/W

1/6

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